| PART |
Description |
Maker |
| NSFY440 NSFY31040 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-257 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 8A条（丁）|57
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3.3A I(D) | TO-257 晶体管| MOSFET的| N沟道| 1KV交五（巴西）直| 3.3AI（四）|57
|
Bel Fuse, Inc.
SIEMENS AG
|
| PPF440J |
N Channel MOSFET; Package: TO-257; ID (A): 4.4; RDS(on) (Ohms): 0.85; PD (W): 60; BVDSS (V): 500; Rq: 2.1; 7 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB
|
Microsemi, Corp.
|
| IRHMB58064 IRHMB53064 IRHMB54064 IRHMB57064 |
45 A, 60 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
|
IRF[International Rectifier]
http://
|
| IRHY3230CM JANSR2N7381 JANSF2N7381 JANSG2N7381 JAN |
9.4 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
|
International Rectifier
|
| IRHY593034CM IRHY597034CM IRHY597034CM-15 |
18 A, 60 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Simple Drive Requirements
|
International Rectifier
|
| IRFM250 |
POWER MOSFET THRU-HOLE (TO-254AA)
|
New Jersey Semi-Conductor Products, Inc.
|
| IRFY9140M IRFY9140 |
POWER MOSFET THRU-HOLE (TO-257AA)
|
International Rectifier
|
| IRFY9140M IRFY9140 |
POWER MOSFET THRU-HOLE (TO-257AA)
|
IRF[International Rectifier]
|
| IRHM57264SE |
250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-254AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE
|
IRF[International Rectifier]
|
| IRFM440 JANTX2N7222 JANTXV2N7222 IRFM440-15 |
Simple Drive Requirements
From old datasheet system
POWER MOSFET THRU-HOLE (TO-254AA)
500V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
|
IRF[International Rectifier]
|
| IRHF57214SE |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
|
IRF[International Rectifier]
|
