| PART |
Description |
Maker |
| FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLM5359-4F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET
|
Eudyna Devices Inc
|
| SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
SONY [Sony Corporation]
|
| CFH2162-P1 CFH2162-P109 |
800 to 900 MHz 36 dBm Power GaAs FET UHF BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband, Inc.
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
| NEZ1011-3E |
X BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC, Corp.
|
| NEZ1414-3E |
KU BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC, Corp.
|
| FLM7785-6F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
FUJITSU LTD
|
| FLM1213-6F |
KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
FUJITSU LTD
|
| CFH2162-P509 |
2.3 to 2.5 GHz
S BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband
MIMIX BROADBAND INC
|
| CF739E6433 |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
|
TRIQUINT SEMICONDUCTOR INC
|
|
