| PART |
Description |
Maker |
| BSM100GT120DN2 100T12N2 |
IGBT Power Module (Three single switches Including fast free-wheeling diodes Package with insulated metal base plate) 150 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| APTGT400U120D4 |
Single Switch - IGBT
Single switch Trench IGBT Power Module
|
Advanced Power Technology
|
| APTGT200U120D4 |
Single switch Trench IGBT Power Module
Single Switch - IGBT
|
Advanced Power Technology
|
| FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Infineon Technologies AG
|
| APTGF200U120D |
Single Switch Diodes - IGBT
Single Switch with Series diodes NPT IGBT Power Module
|
ADPOW[Advanced Power Technology]
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| APTLGF210U120T |
Single Switch Intelligent Power Module - IGBT
|
Advanced Power Technology
|
| APTGF200U60D4 |
Single switch NPT IGBT Power Module
|
ADPOW[Advanced Power Technology]
|
| APTGF500U60D4G |
Single switch NPT IGBT Power Module
|
Microsemi Corporation
|
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| 7MBP10PE120 7MBR10PE120 |
IGBT module (S series)
IGBT Module(Power Integrated Module)
|
FUJI[Fuji Electric]
|
