| PART |
Description |
Maker |
| TSAL7300 |
GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package
GaAs/GaAlAs IR Emitting Diode in 庐5 mm (T-13/4) Package
GaAs/GaAlAs IR Emitting Diode in 5 mm (T-13/4) Package
GaAs/GaAlAs IR Emitting Diode in ? 5 mm (T?1 3/4)Package
From old datasheet system
GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package
|
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| TSMF3700 |
GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package
|
Vishay Siliconix
|
| TSHA620. TSHA6200 TSHA620 TSHA6203 TSHA6201 TSHA62 |
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package 红外发光二极管的GaAIAs在？5毫米（翻 13 / 4）包
GaAlAs Infrared Emitting Diodes in ? 5 mm (T?1 3/4)Package
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package
From old datasheet system
GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package
GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
VISAY[Vishay Siliconix]
|
| MIE-514L3 514L3 |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE 发动器的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| SFH464E7800 SFH464 Q62702-Q1745 |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm 发动器，Lumineszenzdiode 660纳米发光二极管的GaAIAs 660纳米
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| KLP-32R |
Light Emitting Diode(GaAlAs)
|
KODENSHI KOREA CORP.
|
| HE8404SG_06 HE8404SG06 |
GaAlAs Infrared Emitting Diode
|
OPNEXT[Opnext. Inc.]
|
| TSAL7600 |
GaAs/GaAlAs IR Emitting Diode
|
Vishay Siliconix
|
| LNA4501F |
GaAlAs Red Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
| TSAL7600 |
GaAs/GaAlAs IR Emitting Diode in 5 mm (T-1?) Package
|
Vishay
|
| LTE-4206 |
GaAlAs T-1 Standard 3 Infrared Emitting Diode
|
Lite-On Technology
|
| TSAL6200 |
GaAs/GaAlAs IR Emitting Diode in 5 mm (T-1?) Package
|
Vishay
|
