| PART |
Description |
Maker |
| MX26C4000BTI-90 MX26C4000BQI-15 MX26C4000BQI-10 MX |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PDSO32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PQCC32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PQCC32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PDIP32
Switch Actuator; For Use With:18 Series Switches; Accessory Type:Spring Lever Actuator RoHS Compliant: Yes
IC DRIVER 1/2BRDG LOW SIDE 16DIP
DIODE SCHTTKY 150V 2X30A TO247AD
|
Macronix International Co., Ltd.
|
| MX27C4000 MX27C4000MC-10 MX27C4000MC-12 MX27C4000M |
4M-BIT [512K x8] CMOS EPROM 512K X 8 OTPROM, 150 ns, PDSO32
4M-BIT [512K x8] CMOS EPROM 512K X 8 OTPROM, 120 ns, PQCC32
4M-BIT [512K x8] CMOS EPROM 512K X 8 OTPROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
| 27C512A 27C512A-12EVS 11173E 27C512A-12ISO 27C512A |
512K (64K x 8) CMOS EPROM 12k4K的8）的CMOS存储
From old datasheet system
512K (64Kx8) CMOS EPROM
|
Microchip Technology, Inc.
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
| MX27C4000TC-15 27C4000-10 27C4000-12 27C4000-15 27 |
4M-BIT [512K x8] CMOS EPROM
|
MCNIX[Macronix International]
|
| HT27C040 |
CMOS 512K x 8-Bit OTP EPROM
|
Holtek Microelectronics
|
| 27C4000-90 |
4M-BIT [512K x8] CMOS EPROM 4分位[12k x8]的CMOS存储
|
Macronix International Co., Ltd.
|
| 27C4111-90 |
4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE
|
Macronix International Co., Ltd.
|
| 27L4000-25 27L4000-20 |
4M-BIT [512K x8] LOW VOLTAGE OPERATION CMOS EPROM 4分位[12k x8]低电压工作的CMOS存储
|
Macronix International Co., Ltd.
|
| AT27LV512ANBSP AT27LV512A AT27LV512A-70RI AT27LV51 |
x8 EPROM
From old datasheet system
512K bit, 3-Volt EPROM
|
Atmel Corp
|
| AT27BV040 AT27BV040-12VI AT27BV040-12JI AT27BV040- |
120NS, VSOP, IND TEMP(EPROM) 512K X 8 OTPROM, 120 ns, PDSO32
4-Megabit (512K x 8) Unregulated Battery-Voltage High-Speed OTP EPROM
|
Atmel, Corp.
ATMEL Corporation
|
| TC55W800FT-70 |
512K Word x 16 Bit/1M Word x 8 Bit Full CMOS Static RAM(512K x 16 1M x 8 CMOS 静态RAM) 12k字16 Bit/1M字8位全部的CMOS静态RAM（为512k字16 100万字× 8位的CMOS静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns
256K (32K x 8-bit) UV EPROM, 250ns
32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM
256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
