| PART |
Description |
Maker |
| IDT71V416L |
(IDT71V416L/S) .3V CMOS Static RAM 4 Meg
|
Integrated Device Technology
|
| IDT71V416VL |
(IDT71V416VL/VS) 3.3V CMOS Static RAM 4 Meg
|
Integrated Device Technology
|
| IDT71T016SA20YI IDT71T016SA IDT71T016SA10BF IDT71T |
2.5V CMOS Static RAM, 1 Meg (64k X 16-Bit)
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit)
|
IDT[Integrated Device Technology]
|
| P3C1041-10JC P3C1041-10JI P3C1041-10TC P3C1041-10T |
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM
|
Pyramid Semiconductor Corporation
|
| P4C1041L-55TILF |
LOW POWER 256K x 16 (4 MEG) STATIC CMOS RAM
|
Pyramid Semiconductor C...
|
| IDT71V124SA IDT71V124SA12PHI IDT71V124SA15PHI |
3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout
|
Integrated Device Techn...
|
| IDT71V124SA 71V124SA_DS_30147 |
3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power &Ground Pinout
From old datasheet system
|
IDT
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IDT6168LA15PI IDT6168LA IDT6168SA 6168LA_DS_9916 I |
5.0V, 4k X 4, CMOS, Asynchronous, Static RAM
From old datasheet system
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDIP20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDSO20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 25 ns, CQCC20
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power
512Kx8 bit CMOS static RAM, 100ns, low power
524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM
PT 16C 16#16 PIN PLUG
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
