| PART |
Description |
Maker |
| MIE-514H4 514H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-304L3 304L3 |
Infrared Emitting Diodes (IRED)
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TSMF3700 |
GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package
|
Vishay Siliconix
|
| KEM5001R |
Infrared Emitting Diode(GaAlAs)
|
KODENSHI KOREA CORP.
|
| KLB-16AI-88 |
Infrared Emitting Diode(GaAlAs)
|
KODENSHI KOREA CORP.
|
| OP294 OP299 |
GaAlAs Plastic Infrared Emitting Diode
|
OPTEK TECHNOLOGY INC
OPTEK[OPTEK Technologies]
ETC
|
| LEXLTN2S0001 LNA4905L08 |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Semiconductor
|
| LTE-4206 |
GaAlAs T-1 Standard 3 Infrared Emitting Diode
|
Lite-On Technology
|
| TSHA6200 TSHA6202 TSHA620009 TSHA6201 TSHA6203 |
Infrared Emitting Diode, 875 nm, GaAlAs
|
Vishay Siliconix
|
| TSHA550009 |
Infrared Emitting Diode, 875 nm, GaAlAs
|
Vishay Siliconix
|
| LTE-2871 |
GaAlAs T-1 3/4 Modified Infrared Emitting Diode
|
LITE-ON ELECTRONICS INC
光宝科技股份有限公司
Lite-On Technology Corporation
|
| LN184 |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
