PART |
Description |
Maker |
APT2X61D60J APT2X60D60J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 600V 60A
|
ADPOW[Advanced Power Technology]
|
APT2X30D60J APT2X31D60J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 600V 30A
|
Advanced Power Technolo... ADPOW[Advanced Power Technology]
|
APT2X31D120J APT2X30D120J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 1200V 30A CONNECTOR ACCESSORY 双超快软恢复整流二极
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
|
STE250N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE -通道增强型功率MOS器件中的ISOTOP封装
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
28333-PCN-001-A |
Mold Compound and Die Attach Change for ETQFP Package
|
M/A-COM Technology Solutions, Inc.
|
APT75GN120J |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
BZT52C6V2S BZT52C11S |
Planar Die Construction Ultra-Small Surface Mount Package
|
TY Semiconductor Co., Ltd TY Semiconductor Co., L...
|
APT150GT120JR |
Thunderbolt IGBT Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT Thunderbolt IGBT
|
Microsemi, Corp. Microsemi Corporation
|
PLED512 |
DUAL LINE 5 VOLT DIE
|
PROTEC[Protek Devices]
|
STE26NA90 6245 -STE26NA90 |
N-Channel 900V-0.25惟-26A-ISOTOP Fast Power MOSFET(N娌??蹇?????MOSFET) From old datasheet system N - CHANNEL 900V - 0.25ohm- 26A - ISOTOP FAST POWER MOSFET N - CHANNEL 900V - 0.25 Ohm - 26A - ISOTOP FAST POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|