| PART |
Description |
Maker |
| MSM54V12222A |
From old datasheet system
262214 Words x 12 Bits FIELD MEMORY
262,214 WORDS X 12 BITS FIELD MEMORY
|
OKI[OKI electronic componets]
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| AL440B-24 |
4M-Bit High Speed FIFO Field Memory
|
AverLogic Technologies, Inc.
|
| AL440B-12 AL440B-24 AL440B |
4M-Bit High Speed FIFO Field Memory
|
AverLogic Technologies Inc
|
| IDT723611L30PQF |
IC FIFO 64 X 36 SYNCHRONOUS FIFO MEMORY 0 70C PQFP-132 36/TUBE 64 X 36 OTHER FIFO, 15 ns, PQFP132
|
Integrated Device Technology, Inc.
|
| IDT7200L IDT7201LA IDT7202LA |
CMOS ASYCHRONOUS FIFO 256 x 9 Memory(CMOS异步先进先出256x 9位存储器)
CMOS ASYCHRONOUS FIFO 512 x 9 Memory(CMOS异步先进先出512x 9位存储器)
CMOS ASYCHRONOUS FIFO 1024 x 9 Memory(CMOS异步先进先出1024x 9位存储器) 的CMOS异步先进先出存储024 × 9的CMOS（异步先进先024x 9位存储器
|
Intersil Corporation
Intersil, Corp.
|
| IDT72T51236L6BB IDT72T51236L5BB IDT72T51246L5BB ID |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits 32K X 36 OTHER FIFO, 3.7 ns, PBGA256
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits 32K X 36 OTHER FIFO, 3.6 ns, PBGA256
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits 16K X 36 OTHER FIFO, 3.7 ns, PBGA256
|
Integrated Device Technology, Inc.
|
| TC58FVM7B2AFT80 |
128MBIT (16Mx8 BITS/8Mx16 BITS) CMOS FLASH MEMORY
|
TOSHIBA
|
| TC58FVB160FT-85 TC58FVT160FT-85 TC58FVB160FT-12 TC |
16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
TOSHIBA
|
| K9F4008W0A K9F4008W0A- K9F4008W0A-TCB0 K9F4008W0A- |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
512K x 8 bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MS81V04166-XXTB MS81V04166 |
Dual FIFO (262,214 Words × 8 Bits) × 2
Dual FIFO (262,214 Words 】 8 Bits) 】 2
|
OKI[OKI electronic componets]
|
| IDT72V273L7BC IDT72V273L7BCI IDT72V273L7PF IDT72V2 |
64K x 18 / 128K x 9 SuperSync II FIFO, 3.3V
32K x 18 / 64K x 9 SuperSync II FIFO, 3.3V
16K x 18 / 32K x 9 SuperSync II FIFO, 3.3V
8K x 18 / 16K x 9 SuperSync II FIFO, 3.3V
4K x 18 / 8K x 9 SuperSync II FIFO, 3.3V
2K x 18 / 4K x 9 SuperSync II FIFO, 3.3V
1K x 18 / 2K x 9 SuperSync II FIFO, 3.3V
512 x 18 / 1K x 9 SuperSync II FIFO, 3.3V
3.3 VOLT HIGH-DENSITY SUPERSYNC NARROW BUS FIFO
|
IDT
Integrated Device Technology
|
