Part Number Hot Search : 
S2415 FCH30B10 2SC4668 GLM75H AT89C51 NSR01 SMA4745A PJ20168
Product Description
Full Text Search

VP0300LS - P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电30V,夹断电0.6A的P沟道增强型MOSFET) From old datasheet system P-Channel Enhancement-Mode MOSFET Transistors

VP0300LS_298456.PDF Datasheet

 
Part No. VP0300LS VP0300L VQ2001P VQ2001J 70217
Description P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电30V,夹断电0.6A的P沟道增强型MOSFET)
From old datasheet system
P-Channel Enhancement-Mode MOSFET Transistors

File Size 71.24K  /  4 Page  

Maker

Vishay Intertechnology,Inc.



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: VP0300LS
Maker: VISHAY
Pack: TO-92
Stock: Reserved
Unit price for :
    50: $0.50
  100: $0.48
1000: $0.45

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ VP0300LS VP0300L VQ2001P VQ2001J 70217 Datasheet PDF Downlaod from Datasheet.HK ]
[VP0300LS VP0300L VQ2001P VQ2001J 70217 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for VP0300LS ]

[ Price & Availability of VP0300LS by FindChips.com ]

 Full text search : P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电30V,夹断电0.6A的P沟道增强型MOSFET) From old datasheet system P-Channel Enhancement-Mode MOSFET Transistors
 Product Description search : P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电30V,夹断电0.6A的P沟道增强型MOSFET) From old datasheet system P-Channel Enhancement-Mode MOSFET Transistors


 Related Part Number
PART Description Maker
STN2N10L 4585 N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOS晶体 N沟道增强模式功率MOS晶体管(不适用沟道增强模式功率马鞍山晶体管
From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STMicroelectronics N.V.
ST Microelectronics
APT1001RBLC APT1001RSLC APT1001 POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
STB60N03L-10 4892 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PC 3C 38#16 PIN RECP
N-CHANNEL Power MOSFET
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
STP33N10FI STP33N10 3141 N-Channel Enhancement Mode Power MOS Transistor(N娌??澧?己妯″????MOSFET)
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system
STMICROELECTRONICS[STMicroelectronics]
STP5NA60 STP5NA60FI 3065 N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET)
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
APT6025BFLL APT6025SFLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 24A 0.250 Ohm
Advanced Power Technology, Ltd.
APT6013B2FLL APT6013LFLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 43A 0.130 Ohm
Advanced Power Technology, Ltd.
APT10035B2LL APT10035LLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 28A 0.350 Ohm
LED Lamp; Color:Red/Red; Leaded Process Compatible:Yes
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
http://
Advanced Power Technology Ltd.
STP38N06 3645 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
STMICROELECTRONICS[STMicroelectronics]
APT10045JFLL POWER MOS 7 1000V 21A 0.450 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Advanced Power Technology Ltd.
APT8014L2LL Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 800V 52A 0.140 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Advanced Power Technology
http://
APT50M65B2FLL APT50M65LFLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 500V 67A 0.065 Ohm
Advanced Power Technology Ltd.
 
 Related keyword From Full Text Search System
VP0300LS Ic-on-line VP0300LS toshiba VP0300LS filter VP0300LS 参数 封装 VP0300LS barrier
VP0300LS 参数查询 VP0300LS electronics VP0300LS informacion de VP0300LS video monitor VP0300LS supply
 

 

Price & Availability of VP0300LS

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.21412515640259