| PART |
Description |
Maker |
| ESLB-P245BB ESLB-P245BB-2 ESLB-P245BB-1 |
2.4-2.5GHz Band Chip Multilayer Band Pass Filter
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
| MGFK35V4045_03 MGFK35V4045 MGFK35V404503 |
14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785 |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V7785A_04 MGFC42V7785A MGFC42V7785A04 |
7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RFFM3482E RFFM3482ESR RFFM3482ETR13X RFFM3482ESQ |
2.4GHz TO 2.5GHz SINGLE-BAND FRONT END MODULE
|
RF Micro Devices
|
| FMPA215107 FMPA2151 |
2.4-2.5GHz and 4.9-5.9GHz Dual Band Linear Power Amplifier Module
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| B69842N5807A150 |
Microwave Ceramics and Modules 2 Pole Filter for W-LAN 5GHz /5.725-5.875 Band
|
EPCOS AG
EPCOS[EPCOS]
|
| SP8910 SP8910KGMP1T SP8910KG SP8910KGMP1S |
5GHZ ±10 Fixed Modulus Divider
5GHZ 10 Fixed Modulus Divider
5GHZ ÷10 Fixed Modulus Divider(5GHZ ÷10超高速低功耗固定模数除法器)
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:30A; On-Resistance, Rds(on):0.028ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No
|
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
| NJG1552F-L5 NJG1552F-L3 NJG1552F-L7 NJG1552F-C8 NJ |
1.5ghZ/1.9ghZ mixer gAaS mmic 1.5ghZ/1.9ghZ砷化镓MMIC混频
|
New Japan Radio Co., Ltd.
|
| 55GN01CA 55GN01CA12 ENA1111A |
RF Transistor, 10V, 70mA, fT=5.5GHz, NPN Single CP
UHF Wide-band Low-noise Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| MGFK33V4045_97 MGFK33V4045 MGFK33V404597 |
14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
