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K4J52324QC - 512Mbit GDDR3 SDRAM

K4J52324QC_297087.PDF Datasheet
 Full text search : 512Mbit GDDR3 SDRAM
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PART Description Maker
K4J52324QC K4J52324QC-BC14 K4J52324QC-BC16 K4J5232 512Mbit GDDR3 SDRAM
 Samsung Electronic
K4J55323QF-GC K4J55323QF-GC14 K4J55323QF-GC15 K4J5 256Mbit GDDR3 SDRAM
 Samsung semiconductor
W641GG2JB-14 1-Gbit GDDR3 Graphics SDRAM
 Winbond
K4N51163QC-ZC25 K4N51163QC-ZC36 K4N51163QC-ZC33 K4 ; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes 512MB的GDDR2 SDRAM
512Mbit gDDR2 SDRAM
 http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
K4N51163QC-ZC36 K4N51163QC-ZC K4N51163QC-ZC25 K4N5 512Mbit gDDR2 SDRAM
 SAMSUNG[Samsung semiconductor]
HYB25D512400BF-5 HYB25D512800BF-6 HYB25D512160BE-5 512Mbit Double Data Rate SDRAM 512MB的双倍数据速率SDRAM
 Infineon Technologies A...
Infineon Technologies AG
M39P0R8070E2 M39P0R8070E2ZADE M39P0R8070E2ZADF 256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
 Numonyx B.V
HYB18H1G321AF-10 HYB18H1G321AF-11 GDDR3 Graphics RAM 1-Gbit GDDR3 Graphics RAM
 Qimonda AG
HY27USXXX HY27SS16121M HY27SSXXX HY27US08121M HY27 (HY27SSxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512兆（64Mx8bit / 32Mx16bit）NAND闪存
 Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
HYB18H512321BF-08_10 HYB18H512321BF HYB18H512321BF 512-Mbit GDDR3 Graphics RAM
 Qimonda AG
http://
HYB18H512321BF-08 HYB18H512321BF-10 512-Mbit GDDR3 Graphics RAM
 Qimonda AG
HY5S7B6ALFP-6 HY5S7B6ALFP-H HY5S7B6ALFP-S 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
 Hynix Semiconductor
 
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