PART |
Description |
Maker |
K1S16161CA-I K1S16161CA DSK1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
K1S3216BCD |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K1S6416BCC K1S6416BCC-I |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
Samsung semiconductor
|
K1S161611A-I DS_K1S161611A K1S161611A DSK1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
K1S1616B1A-I K1S1616B1A K1S1616B1A-BI70 K1S1616B1A |
1Mx16 bit Uni-Transistor Random Access Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
GM71C16163CCL GM71S16163CCL GM71CS16400CLJ-6 GM71C |
1Mx16|5V|4K|5/6|FP/EDO DRAM - 16M x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Electronic Theatre Controls, Inc. Rochester Electronics, LLC Integrated Silicon Solution, Inc.
|
M5M465400DTP-6S M5M467400DTP-6S M5M465160DTP-5 M5M |
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM 快速页面模7108864位(16777216 - Word位)动态随机存储器 4M X 16 FAST PAGE DRAM, 50 ns, PDSO50 16M X 4 FAST PAGE DRAM, 50 ns, PDSO32
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
MSM51V16400A |
DRAM / FAST PAGE MODE TYPE 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI SEMICONDUCTOR CO., LTD. OKI[OKI electronic componets] OKI electronic components
|
MSM51V16160D MSM51V16160DSL |
DRAM / FAST PAGE MODE TYPE 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI[OKI electronic componets] OKI electronic components
|
UPD23C128040BL UPD23C128040BLGX UPD23C128040BLGX-X |
128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC
|
UPD23C32080ALGX-XXX UPD23C32080ALGY-MKH UPD23C3208 |
32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC[NEC]
|
K1S321615M K1S321615M-E K1S321615M-EE10 |
2M x 16 bit Uni-Transistor CMOS RAM Data Sheet 2Mx16 bit Uni-Transistor Random Access Memory
|
Samsung Electronic Samsung semiconductor
|