| PART |
Description |
Maker |
| IC42S16400A IC42S16400A-7TIG IC42S16400A-6BG IC42S |
1M x 16Bit x 4 Banks (64-MBIT) SDRAM
DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| IC43R16160-7T |
4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
|
Integrated Circuit Solu...
|
| IS42S32800B-7T IS42S32800B-6T IS42S32800B-6BI IS42 |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
| IS42S32800B-6B IS42S32800B-6BLI IS42S32800B-6T IS4 |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| HY57V641620HGT-6 HY57V641620HGT-7 HY57V641620HGT-5 |
4 Banks x 1M x 16Bit Synchronous DRAM 4银行× 1米16位同步DRAM
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| K4M28163PH |
2M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
| K4M56163LG K4M56163LG-RN_F75 K4M56163LG-RN_G K4M56 |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
Samsung semiconductor
|
| K4S511633F-YPC K4S511633F K4S511633F-F1H K4S511633 |
8M x 16Bit x 4 Banks Mobile SDRAM 8米16 × 4银行移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S28163LD-RFR |
2M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet
|
Samsung Electronic
|
| K4S641633F-GLN |
1M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet
|
Samsung Electronic
|
| K4S161622E-TC/I/E |
512K x 16Bit x 2 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
