| PART |
Description |
Maker |
| MIE-524H4 524H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| TSMF3700 |
GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package
|
Vishay Siliconix
|
| TSML1000 TSML1040 TSML1020 TSML1030 |
Extented Power IR Emitting Diode in SMD Package
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
VISAY[Vishay Siliconix]
|
| HE7601SG |
GaAlAs Infrared Emitting Diode
|
OPNEXT[Opnext. Inc.]
|
| LEXLTN2S0001 LNA4905L08 |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Semiconductor
|
| OPE5594S |
The OPE5594S is GaAlAs infrared emitting diode
|
Roithner LaserTechnik G...
|
| LTE-2871 |
Gaalas T-1 3/4 Modified Infrared Emitting Diode
|
Lite-On Technology
|
| MIE-334L3 |
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| LN189S |
GaAlAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
| LN172 |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
