| PART |
Description |
Maker |
| R1RW0404DGE-2PR R1RW0404D R1RW0404DGE-2LR REJ03C01 |
Memory>Fast SRAM>Asynchronous SRAM
4M HIGH SPEED SRAM (1-MWORD X 4-BIT)
|
RENESAS[Renesas Electronics Corporation]
|
| HM6216255HCTTI-12 HM6216255HCJPI-12 |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|
| GS73024B-15I GS73024B GS73024B-10 GS73024B-10I GS7 |
3Mb28K x 24Bit）Asynchronous SRAM(3M位（128K x 24位）异步静态RAM)
128K X 24 3MB ASYNCHRONOUS SRAM 128KX 24 3MB的异步SRAM
128K X 24 3MB ASYNCHRONOUS SRAM 128K的X 24 3MB的异步SRAM
|
List of Unclassifed Manufacturers
ETC[ETC]
GSI Technology
Electronic Theatre Controls, Inc.
|
| M68AF511A M68AF511AL55MC1T M68AF511AL55MC6T M68AF5 |
4 Mbit (512K x8) / 5V Asynchronous SRAM
4 Mbit (512K x8), 5V Asynchronous SRAM(512K X 8 SRAM 5V SOP32 ,I-Temp)
4 Mbit (512K x8), 5V Asynchronous SRAM 4兆位（为512k × 8），5V的异步SRAM
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| GS71024T-8T GS71024T-10T GS71024T-10IT GS71024U-10 |
8ns 64K x 24 1.5Mb asynchronous SRAM
1.5Mb4K x 24Bit）Asynchronous SRAM(1.5M位（64K x 24位）异步静态RAM) 即：1.5MB4K的x 24位）异步SRAM50万位4K的24位）异步静态RAM）的
x24 SRAM x24的SRAM
|
GSI Technology, Inc.
Electronic Theatre Controls, Inc.
|
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
| GS70328TS-8IT GS7032 GS70328SJ GS70328SJ-10 GS7032 |
256K Async SRAMs
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 100uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
32K x 8 256Kb Asynchronous SRAM 32K的8 256Kb的异步SRAM
32K x 8 256Kb Asynchronous SRAM
|
GSI[GSI Technology]
Electronic Theatre Controls, Inc.
|
| AS7C3256AA AS7C3256A AS7C3256A-20TIN AS7C3256A-10J |
Quadruple D-Type Flip-Flops With Clear 16-TSSOP -40 to 85
Dual 4-Input Positive-NAND Gate 14-TSSOP -40 to 85 32K X 8 STANDARD SRAM, 20 ns, PDSO28
IC,AS7C3256A-10TCN,TSOP-28 ASY SRAM,10NS,32K X 8,3.3V 32K X 8 STANDARD SRAM, 10 ns, PDSO28
3.3V 32K X 8 CMOS SRAM (Common I/O) 32K X 8 STANDARD SRAM, 10 ns, PDSO28
Dual 4-Input Positive-NAND Gate 14-SOIC -40 to 85 32K X 8 STANDARD SRAM, 12 ns, PDSO28
Dual 4-Input Positive-NAND Gate 14-TVSOP -40 to 85
Dual 4-Input Positive-NAND Gate 14-SSOP -40 to 85
SRAM - 3.3V Fast Asynchronous
|
ALLIANCE MEMORY INC
Alliance Memory, Inc.
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| GS78108B-12 GS78108B-12I GS78108B GS78108B-10 GS78 |
1M x 8 8Mb Asynchronous SRAM 1M X 8 STANDARD SRAM, 15 ns, PBGA119
|
GSI Technology, Inc.
|
| N01L63W3AB25I N01L63W3AB25IT N01L63W3A |
1 Mb Ultra-Low Power Asynchronous CMOS SRAM
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K ? 16 bit
|
ON Semiconductor
|
| M68AR128M 7993 M68AR128ML55ZB1T M68AR128ML55ZB6T M |
2 MBIT (128K X16) 1.8V ASYNCHRONOUS SRAM
2 MBIT (128K X16) 1.8V ASYNCHRONOUS SRAM
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
