PART |
Description |
Maker |
MTB75N03HDL MTB75N03HDL_D ON2451 |
TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS From old datasheet system
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Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
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MTD20N06HDL_D ON2582 |
TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS From old datasheet system
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ON Semi
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MTD20P03 MTD20P03HDL MTD20P03HDL_D ON2488 |
TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM From old datasheet system
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Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
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MTP75N03HDL MTP75N03HDL_D ON2641 |
OSCILLATORS 100PPM -10 70 3.3V 4 8.000MHZ TS HCMOS 5X7MM 4PAD SMD 75 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS POWER FET LOGIC LEVEL 75 AMPERES RDS(on) = 9.0 mOHM 25 VOLTS From old datasheet system
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Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
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MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 10 AMPERES
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
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ON Semiconductor MOTOROLA[Motorola, Inc] http://
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MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
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ON Semiconductor MOTOROLA[Motorola, Inc] Motorola, Inc.
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MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system TMOS POWER FET 3.0 AMPERES 600 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
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MOTOROLA[Motorola, Inc] ON Semiconductor
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BUK9506-55A BUK9E06-55A BUK9506_9606_9E06_55A-03 B |
TrenchMOSlogic level FET TrenchMOS?logic level FET TrenchMOS TM logic level FET TrenchMOS (tm) logic level FET From old datasheet system TrenchMOS logic level FET
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Philips NXP Semiconductors
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MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate From old datasheet system TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
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ON Semiconductor Motorola, Inc
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MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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