| PART |
Description |
Maker |
| BR24L04FJ-W BR24L04FVM-W BR24L04FV-W BR24L04F-W BR |
512】8 bit electrically erasable PROM
5128 bit electrically erasable PROM
|
ROHM[Rohm]
|
| TU24C04BP3I TU24C04BSI TU24C04 TU24C04BP TU24C04BP |
CMOS I2C 2-WIRE BUS 4K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 512 X 8 BIT EEPROM
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| BR24L04F-W BR24L04-W BR24L04FJ-W |
; Leaded Process Compatible:Yes RoHS Compliant: Yes
512 bit electrically erasable PROM 512位电可擦除可编程ROM
|
Rohm CO.,LTD.
Rohm Co., Ltd.
|
| R1EX25002ASA00A-15 |
Serial Peripheral Interface 2k EEPROM (256-word × 8-bit) 4k EEPROM (512-word × 8-bit) Electrically Erasable and Programmable Read Only Memory
|
Renesas Electronics Corporation
|
| MSM64Q424-NGS-K MSM64422-XXXMS-K MSM64424-XXXMS-K |
Built-in 256/512-Bit EEPROM and LCD Driver 4-Bit Microcontroller 内置256/512-Bit EEPROM和LCD驱动位微控制
|
OKI SEMICONDUCTOR CO., LTD.
|
| R1LP0408C R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408 |
Wide Temperature Range Version 4 M SRAM (512-kword ??8-bit)
R1LP0408C-I Series Datasheet 78K/AUG.01.03
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 】 8-bit)
Memory>Low Power SRAM
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Renesas
|
| X28HC64TMB-90 X28HC64 X28HC64DI-12 X28HC64DI-70 X2 |
5 Volt, Byte Alterable EEPROM 8K X 8 EEPROM 5V, 120 ns, CDFP28
5 Volt, Byte Alterable EEPROM 8K X 8 EEPROM 5V, 90 ns, CQCC32
5 Volt, Byte Alterable EEPROM 8K X 8 EEPROM 5V, 90 ns, CPGA28
5 Volt, Byte Alterable EEPROM 8K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 8K X 8 EEPROM 5V, 70 ns, CDIP28
5 Volt, Byte Alterable EEPROM 8K X 8 EEPROM 5V, 70 ns, CDFP28
5 Volt, Byte Alterable EEPROM 8K X 8 EEPROM 5V, 70 ns, PDIP28
5 Volt, Byte Alterable EEPROM 8K X 8 EEPROM 5V, 90 ns, PDIP28
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| EP20K200CP240I8ES EP20K200CB356I7ES EP20K200CB356I |
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -55°C to 125°C; Package: 28-PGA
5V, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 32-PLCC T&R
ASIC 专用集成电路
|
Altera, Corp.
|
| X28HC64J-12 X28HC64E-12 X28HC64E-50 X28HC64JM-50 X |
5 Volt, Byte Alterable E2PROM 5伏，可变E2PROM的字
USB LICENSING DONGLE
5 Volt/ Byte Alterable E2PROM
OSCILLATOR,50.000 MHZ,100PPM
|
http://
Intersil, Corp.
Linear Technology, Corp.
Electronic Theatre Controls, Inc.
Future Designs, Inc.
Xicor Inc.
|
| R1LP0408CSP-7LC R1LP0408C-C R1LP0408CSB-5SC R1LP04 |
4M SRAM (512-kword ??8-bit)
4M SRAM (512-kword 8-bit)
4M SRAM (512-kword × 8-bit)
4M SRAM (512-kword 】 8-bit)
Memory>Low Power SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| TFBGA100 LPC2364HBD100 LPC2364FET100 LPC2364FBD100 |
ARM7 with 128 kB flash, 34 kB SRAM, Ethernet, USB 2.0 Device, CAN, and 10-bit ADC
ARM7 with 512 kB flash, 58 kB SRAM, Ethernet, USB 2.0 Device, CAN, SD/MMC, and 10-bit ADC
Single-chip 16-bit/32-bit microcontrollers; up to 512 kB flashnull
Single-chip 16-bit/32-bit ocontrollers; up to 512 kB flash with ISP/IAP, Ethernet, USB 2.0, CAN, and 10-bit ADC/DAC
Single-chip 16-bit/32-bit ocontrollers; up to 512 kB flash with ISP/IAP, Ethernet, USB 2.0, CAN, and 10-bit ADC/DAC
|
NXP Semiconductors
|
