| PART |
Description |
Maker |
| 2SC1967 SC1967 |
RF POWER TRANSISTOR(NPN EPITAXAIL PLANAR TYPE)
From old datasheet system
NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| MT3S06S |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| MT6C03AE |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| UP03312 |
Silicon NPN epitaxial planar type (Tr1), Silicon PNP epitaxial planar type (Tr2) 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp.
|
| NP0H3A3 |
Silicon PNP epitaxial planar type (Tr1), Silicon NPN epitaxial planar type (Tr2)
|
PANASONIC[Panasonic Semiconductor]
|
| XN04322G |
Silicon NPN epitaxial planar type (Tr1), Silicon PNP epitaxial planar type (Tr2)
|
Panasonic
|
| KTX401U |
EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| 2SC1324 |
NPN EPITAXIAL PLANAR TYPE
|
New Jersey Semi-Conductor Products, Inc.
|
| 2SC2053 |
NPN EPITAXIAL PLANAR TYPE
|
New Jersey Semi-Conductor Products, Inc.
|
| ULB122 ULB122G-XX-TM3-T ULB122G-B6-TM3-T |
NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR
0.8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-251
|
UNISONIC TECHNOLOGIES CO LTD
|
| 2SD2273 |
Silicon NPN triple diffusion planar type Darlington(For power amplification) 3 A, 80 V, NPN, Si, POWER TRANSISTOR
|
Panasonic, Corp.
|
| 2SC4960 2SC4960A |
Silicon NPN triple diffusion planar type(For power switching) 1 A, 900 V, NPN, Si, POWER TRANSISTOR
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
