| PART |
Description |
Maker |
| LET19060C |
RF POWER TRANSISTORS Ldmos Enhanced Technology RF功率晶体管LDMOS的增强技
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MRF13750HS |
RF Power LDMOS Transistors
|
NXP Semiconductors
|
| LET8180 |
RF POWER TRANSISTORS Ldmos Enhanced Technology
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| LET21008 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
|
STMICROELECTRONICS[STMicroelectronics]
|
| AN1223 |
RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY
|
SGS Thomson Microelectronics
|
| MRFE6VP61K25GSR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 M |
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
| BLA1011-300 LA1011-300 |
Avionics LDMOS transistors
Avionics LDMOS transistor BLA1011-300<SOT957A (LDMOST)|<<http://www.nxp.com/packages/SOT957A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
NXP Semiconductors N.V.
|
| 1011LD300 |
RF Power Transistors: AVIONICS
300 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET
|
ADPOW[Advanced Power Technology]
|
| BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
