| PART |
Description |
Maker |
| GS84032T-166 GS84032B-100 GS84032B-166 GS84032B-15 |
128K X 32 CACHE SRAM, 8 ns, PBGA119
4Mb56K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步静态RAM（带2位脉冲地址计数器）)
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI Technology
|
| MX23C2100 23C2100 MX23C2100PC-15 MX23C2100PC-12 |
2M-BIT 256K x 8/128K x 16 CMOS MASK ROM
From old datasheet system
2M-BIT [256K x 8/128K x 16] CMOS MASK ROM
|
MCNIX[Macronix International]
Macronix 旺宏
|
| MBM29F200BC-90 MBM29F200BC-70 MBM29F200BC-55 MBM29 |
2M (256K x 8/128K x 16) BIT
|
Fujitsu
|
| BR93L66RFVM-WTR CAT28C64BGI-12T CAT25C32Y14I CAT25 |
EEPROM SRL 256X16 BIT
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
EEPROM (4kx8) 32K 2.5-6.0
EEPROM (4kx8) 32K 1.8-6.0
EEPROM (1024x8) 8K
EEPROM 256K X 8 200ns
EEPROM I2C BUS; 4.5 to 5.5V 16Kbit; -40 to 85 C
EEPROM (256x8) 2K 1.8-6.0
EEPROM (512x8) 4k 1.8-6.0
EEPROM 128K X 8 150ns
EEPROM (8kx8) 64K 1.8-6.0
EEPROM (2048x8)(1024x16)16K
EEPROM U 804-29EE0107CWH
EEPROM 64K X 8 70ns
EEPROM (256x8) 2K 2.5-6.0
EEPROM (8kx8) 64K 2.5-6.0
SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, SOIC
SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, TSSOP
EEPROM (384x8) 128k 16
EEPROM SPI 1KBIT
EEPROM SPI 4096X8 BIT
EEPROM SRL 64X16 BIT
EEPROM (256x8) (128x16) 2K
8-Kb I<sup>2</sup>C CMOS Serial EEPROM, SOIC
EEPROM (128x8) 1k 2.5-6.0
EEPROM (8kx8) 64K 5V 90ns
EEPROM (32kx8) 256K 5V 150
EEPROM (32kx8) 256K 5V 120
EEPROM 2kb 1.7-5.5V Ind I2C
EEPROM 512K-Bit CMOS PARA EEPROM
EEPROM (32kx8) 256K 3V 250
EEPROM 64K X 8 512K 5V 150
EEPROM 256K (32KX8)
|
Omron Electronics, LLC
Atmel, Corp.
MITSUMI ELECTRIC CO., LTD.
Intersil, Corp.
Cypress Semiconductor, Corp.
TE Connectivity, Ltd.
Silicon Storage Technology, Inc.
BCD Semiconductor Manufacturing, Ltd.
Belden, Inc.
Rohm Co., Ltd.
Bourns, Inc.
NXP Semiconductors N.V.
Lattice Semiconductor, Corp.
Rectron Semiconductor
SIEMENS AG
Maxim Integrated Products, Inc.
Rochester Electronics, LLC
RF Solutions, Ltd.
Fujitsu, Ltd.
|
| IS24C128A-2PLI IS24C128A-2GLI IS24C256A-3WLA3 IS24 |
128K-bit/ 256K-bit 2-WIRE SERIAL CMOS EEPROM
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| MBM29LV200TC-12 MBM29LV200TC-12PFTN MBM29LV200TC-1 |
FLASH MEMORY 2M (256K x 8/128K x 16) BIT
|
Fujitsu Microelectronics
|
| MCM63F737KZP8.5 MCM63F819KZP8.5 MCM63F737KZP8.5R M |
128K x 36 and 256K x 18 Bit Flow??hrough BurstRAM Synchronous Fast Static RAM
128K x 36 and 256K x 18 Bit Flow?Through BurstRAM Synchronous Fast Static RAM
|
Motorola, Inc
|
| 27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40
Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
| MX28F2100T 28F2100T |
2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
From old datasheet system
|
Macronix 旺宏
|
| MX28F2100B 28F2100B |
2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
From old datasheet system
|
Macronix 旺宏
|
| CY7C0852V |
3.3V 64K/128K X 36 And 128K/256K X 18 Synchronous Dual-port RAM
|
CYPRESS
|
