| PART |
Description |
Maker |
| IRHM93130 IRHM9130 IRHM9130-15 |
Simple Drive Requirements
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
RADIATION HARDENED POWER MOSFET / 100V, P-CHANNEL
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
|
IRF[International Rectifier]
|
| FSYA254R4 FSYA254D FSYA254D1 FSYA254D3 FSYA254R FS |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| JANSR2N7281 FN4294 |
Radiation Hardened/ N-Channel Power MOSFET
Radiation Hardened, N-Channel Power MOSFET
Radiation Hardened N-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| HS-1410RH 5962F9851801VXC HS9-1410RH-Q |
Radiation Hardened/ High Speed/ Low Power/ Current Feedback Op Amp with Output Disable
CAP 4-ARRAY 47000PF 16V X7R 1206
Radiation Hardened, High Speed, Low
Power, Current Feedback Op Amp with
Output Disable(抗辐射高速、低功耗电流反馈放大器（输出禁止）)
Radiation Hardened, High Speed, Low Power, Current Feedback Op Amp with Output Disable OP-AMP, PDFP10
|
Intersil Corporation
Intersil, Corp.
|
| FSPYE230D1 FSPYE230F FSPYE230F4 FSPYE230R4 FN4852 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 200 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HCTS374D HCTS374DMSR HCTS374HMSR HCTS374K HCTS374K |
From old datasheet system
Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered
Radiation Hardened Octal Transparent Latch/ Three-State
|
INTERSIL[Intersil Corporation]
|
| 5962-04238 5962-04239 5962-04240 5962-04241 5962-0 |
10W Total Output Power 28 Vin 3.3 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04238
10W Total Output Power 28 Vin 5 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04239
10W Total Output Power 28 Vin 12 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04240
10W Total Output Power 28 Vin 15 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04241
10W Total Output Power 28 Vin /-5 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04242
10W Total Output Power 28 Vin /-12 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04243
10W Total Output Power 28 Vin /-15 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04244
|
International Rectifier
|
| FSYA150R4 FSYA150D FSYA150D1 FSYA150D3 FSYA150R FS |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 39 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRHY57230CMSE |
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package
RADIATION HARDENED POWER MOSFET
|
International Rectifier
|
| XQVR1000-4CG560M XQVR1000-4CG560V XQVR600-4CB228M |
2.5V Radiation Hardened FPGAs 2.5V的抗辐射FPGA
QPro Virtex 2.5V Radiation Hardened FPGAs
|
Panduit, Corp.
Xilinx, Inc.
|
| IRH7250SE IRH7250SE-15 |
Simple Drive Requirements
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-204AA/AE)
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-204AE package
|
IRF[International Rectifier]
|
