| PART |
Description |
Maker |
| IRHF7230 JANSF2N7262 IRHF8230 JANSR2N7262 JANSG2N7 |
RADIATION HARDENED POWER MOSFET
200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
|
International Rectifier
|
| IRHY597230CM IRHY593230CM IRHY59230CM IRHY597230CM |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
8 A, 200 V, 0.515 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
Simple Drive Requirements
|
IRF[International Rectifier]
|
| IRHF593230 IRHF597230 |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
|
International Rectifier
|
| IRHN93250 JANSF2N7423U IRHN9250 JANSR2N7423U |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
|
IRF[International Rectifier]
|
| JANSR2N7426U MIL-PRF-19500_655 IRHNA9260 IRHNA9326 |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
|
IRF[International Rectifier]
|
| IRHN57250SE |
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package 20000kRad高可靠性单N通道看到一贴片MOSFET的硬 1封装
RADIATION HARDENED POWER MOSFET
|
International Rectifier, Corp.
|
| IRFS250 IRFS250B IRFS250BFP001 |
200V N-Channel B-FET / Substitute of IRFS250 & IRFS250A
200V N-Channel MOSFET
|
Fairchild Semiconductor
|
| FQU630 FQD630 FQD630TM |
200V N-Channel QFET
200V N-Channel MOSFET(N沟道增强型MOS场效应管（漏电流7A, 漏源电压200V，导通电.4Ω
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FQP10N20C FQPF10N20C |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
Fairchild Semiconductor
|
