| PART |
Description |
Maker |
| BT152F-600 BT152F |
600V Vdrm 20A Sensitive Gate Silicon Controlled Rectifier, 1.7@40AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage
Silicon Controlled Rectifiers
|
SEMIWELL[SemiWell Semiconductor]
|
| Z86C95-20AEC |
Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:5mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes 8位微控制
|
Microchip Technology, Inc.
|
| STK14C68-C25 STK14C68-5S30 STK14C68-5S25 STK14C68- |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA
NVRAM (EEPROM Based)
SCR Thyristor; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:30A; Gate Trigger Current Max, Igt:200uA RoHS Compliant: Yes
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15uA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA RoHS Compliant: Yes
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15uA RoHS Compliant: Yes
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):70A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50mA NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| MCK100-6 |
400V Vdrm 0.8A Sensitive Gate Silicon Controlled Rectifier, 1.7@1AV Peak On-State Voltage, 500V/μs Rise of Off-State Voltage
Sensitive Gate Silicon Controlled Rectifiers
|
SemiWell Semiconductor
|
| MAC997A6RLRP MAC997A8 MAC997A8RL1 MAC997A8RLRP MAC |
Sensitive Gate Triacs Silicon Bidirectional Thyristors
SENSITIVE GATE TRACS
617SS Series Unipolar Hall-Effect Digital Position Sensor; dual output; 4-pin DIP IC 600 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92
|
ONSEMI[ON Semiconductor]
|
| MAC4DLM-D MAC4DLM-1G |
Sensitive Gate Triacs; Package: DPAK-3 (SINGLE GAUGE); No of Pins: 4; Container: Rail; Qty per Container: 75 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC
Sensitive Gate Triacs Silicon Bidirectional Thyristors
|
ON Semiconductor
|
| SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 在不扩散核武器条约高高速IGBT的技
IGBTs & DuoPacks - 20A 600V TO220 IGBT
IGBTs & DuoPacks - 20A 600V TO247 IGBT
|
Infineon Technologies AG
http://
Infineon Technologies A...
|
| MCR100-6RLRA MCR100-6RLRM MCR100-6RLRMG MCR100-6RL |
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 400 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 200 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 100 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 600 V, SCR, TO-92
|
ONSEMI[ON Semiconductor]
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| FCB20N60F12 |
600V N-Channe MOSFET 600V, 20A, 190mΩ
|
Fairchild Semiconductor
|
| STB20NM60D |
N-channel 600V - 0.26Ω - 20A - D2PAK FDmesh Power MOSFET
N-channel 600V - 0.26ヘ - 20A - D2PAK FDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| STK16C88-S35 STK16C88-S45I STK16C88-S35I STK16C88- |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35uA
NVRAM (EEPROM Based)
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):35A; Peak Non Repetitive Surge Current, Itsm:500A; Gate Trigger Current Max, Igt:40uA
DIODE TVS 13V 500W AXL UNI 5% NVRAM中（EEPROM的基础
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA
|
Electronic Theatre Controls, Inc.
|
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