| PART |
Description |
Maker |
| M36P0R8070E0 |
256 Mbit Flash memory 128 Mbit (burst) PSRAM
|
Numonyx
|
| NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
ST Microelectronics
|
| AM41LV3204M M410000095 M410000096 AM41LV3204MT10IT |
Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM
|
SPANSION[SPANSION]
AMD[Advanced Micro Devices]
|
| AMD29F010B AM29F010B AMD29F010B-120EC AMD29F010B-1 |
From old datasheet system
1 Mbit (128 K x 8-Bit)
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
|
AMD[Advanced Micro Devices]
AMD Inc
|
| M36LLR8760B1 M36LLR8760M1 M36LLR8760TT M36LLR8760D |
256 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
意法半导
STMicroelectronics
ST Microelectronics
|
| M58LR128KB855 M58LR128KB M58LR128KT M58LR128KT855 |
128 or 256 Mbit (隆驴16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
128 or 256 Mbit (×16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
| S29PL-N07 S29PL127N65GFW000 S29PL129N65GFW000 S29P |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
|
SPANSION
|
| AM29LV200B AM29LV200BB-120EC AM29LV200BB-120ECB AM |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 80 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 16 FLASH 3V PROM, 90 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位256Kx8Bit/128Kx16位）.0伏的CMOS引导扇区闪存
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位56Kx8Bit/128Kx16位）.0伏的CMOS引导扇区闪存
|
http://
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位）的CMOS电压1.8只。同时采取行动，页面模式闪存兆位12x 8-Bit/256x 16位），静态存储器（初步）
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
| AM42DL1614DT45IT AM42DL1614DB45IT AM42DL1614DB35IT |
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM Am29DL16xD 16兆位2米8 1个M x 16位）.0伏的CMOS只，同时作业闪存兆位256亩16位），静态存储器
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM Am29DL16xD 16兆位米8 1个M x 16位）.0伏的CMOS只，同时作业闪存兆位56亩16位），静态存储器
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA69
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM41DL1634DB30IT AM41DL1634DB45IS AM41DL1634DB70IS |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
| 29PL256N S29PL127N65GAW003 S29PL127N65GAWW00 S29PL |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
|
SPANSION
|
