| PART |
Description |
Maker |
| ERA-5XSM |
Monolithic Amplifier 50OHM, Broadband, DC to 4 GHz
MONOLITHIC AMPLIFIERS 50 BROADBAND DC to 8 GHz
|
MINI[Mini-Circuits]
|
| MRF160 MRF160-15 |
The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| PHI214-25S |
Radar Pulsed Power Transistor/ 25W/ lms Pulse/ 10% Duty 1.2 - 1.4 GHz
Radar Pulsed Power Transistor, 25W, lms Pulse, 10% Duty 1.2 - 1.4 GHz 雷达脉冲功率晶体管，25瓦中，LMS脉冲0％的责任12日至1月四号吉
|
Tyco Electronics
|
| PH2729-25M |
Radar Pulsed Power Transistor 25W, 2.7-2.9 GHz, 100μs Pulse, 10% Duty
Radar Pulsed Power Transistor 25W, 2.7-2.9 GHz, 100楼矛s Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| MGFK44A404511 |
14.0-14.5 GHz BAND / 25W
|
Mitsubishi Electric Semiconductor
|
| NMA2218-A1T |
Broadband Microwave Coaxial Noise Sources 1 GHz to 18 GHz
|
Micronetics, Inc.
|
| TDA7490 |
25W 25W STEREO CLASS-D AMPLIFIER 50W MONO IN BTL
|
STMicroelectronics
|
| PE9887-11 |
Broadband Gain Horn Antenna Operating From 1 GHz to 18 GHz With a Nominal 0 dB Gain With SMA Female Input Connector
|
Pasternack Enterprises,...
|
| T2G6001528-Q3 |
18W, 28V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| D1023UK D1023 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应60W-28V-500MHz,单端) 金镀金属多功能硅的DMOS射频场效应管0 28V 175MHz时，单端）（镀金多用的DMOS射频硅场效应管（60 28V的，500MHz的单端式））
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
Microsemi, Corp.
|
| HA3001 |
2.0 - 4.0 GHz Broadband Amplifier
|
HBH Microwave GmbH
|
| HA6001 |
5.0 - 15.0 GHz Broadband Amplifier
|
HBH Microwave GmbH
|
