| PART |
Description |
Maker |
| 28F512 |
512K(64Kx8)CMOS FLASH MEMORY
|
Intel Corp.
|
| TP28F512-120 TN28F512-120 N28F512-120 N28F512-150 |
512K(64Kx8)CMOS FLASH MEMORY
|
INTEL[Intel Corporation]
|
| MX27L512TI-25 27L512-12 27L512-15 27L512-20 27L512 |
512K-BIT [64K x 8] CMOS EPROM
|
MCNIX[Macronix International]
|
| 27C4000-90 |
4M-BIT [512K x8] CMOS EPROM 4分位[12k x8]的CMOS存储
|
Macronix International Co., Ltd.
|
| AT27BV040 AT27BV040-12VI AT27BV040-12JI AT27BV040- |
120NS, VSOP, IND TEMP(EPROM) 512K X 8 OTPROM, 120 ns, PDSO32
4-Megabit (512K x 8) Unregulated Battery-Voltage High-Speed OTP EPROM
|
Atmel, Corp.
ATMEL Corporation
|
| TC55W800FT-70 |
512K Word x 16 Bit/1M Word x 8 Bit Full CMOS Static RAM(512K x 16 1M x 8 CMOS 静态RAM) 12k字16 Bit/1M字8位全部的CMOS静态RAM（为512k字16 100万字× 8位的CMOS静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns
256K (32K x 8-bit) UV EPROM, 250ns
32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM
256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
| AT27C512RNBSP AT27C512R AT27C512R-70JA AT27C512R-1 |
x16 EPROM x16存储
x8 EPROM
From old datasheet system
512K EPROM
|
Atmel, Corp.
Atmel Corp
|
