| PART |
Description |
Maker |
| MT46H32M16 |
Mobile Double Data Rate (DDR) SDRAM
|
Micron Technology
|
| H5MS5162EFR |
536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM)
|
Hynix Semiconductor
|
| HYB25D512160BC-6 HYB25D512800BC-6 |
512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60
512-Mbit Double-Data-Rate SDRAM 64M X 8 DDR DRAM, 0.7 ns, PBGA60
|
Qimonda AG
|
| W942504CH-75 |
DDR SDRAM (Double Data Rate)
|
Winbond Electronics
|
| MT46V4M32 MT46V4M32LG |
DOUBLE DATA RATE DDR SDRAM
|
Micron Technology
|
| SAA32M4 SAA32M4YX6XR4TL SAA32M4YX6XV4TL SAA32MXXX |
DOUBLE DATA RATE (DDR) SDRAM
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| MT46V64M16 MT46V128M8 MT46V256M4 |
DOUBLE DATA RATE (DDR) SDRAM
|
MICRON[Micron Technology]
|
| W9412G2IB W9412G2IB4 W9412G2IB-6I |
1M × 4 BANKS × 32 BITS GDDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
4M X 32 DDR DRAM, 0.7 ns, PBGA144
|
Winbond
WINBOND ELECTRONICS CORP
|
| HYB25D256400BC-5 |
256Mbit Double Data Rate (DDR) Components
|
Infineon
|
| K4D263238F K4D263238F-QC40 K4D263238F-QC50 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL
128Mbit DDR SDRAM
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| W942508CH W942508CH-75 W942508CH-5 W942508CH-6 W94 |
DDR SDRAM (Double Data Rate)
8M x 4 BANKS x 8 BIT DDR SDRAM
|
Winbond Electronics
WINBOND[Winbond]
|
| HYS72D32300HBR-7-C HYS72D32300GBR-5-C HYS72D64320G |
184-Pin Registered Double Data Rate SDRAM Module 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
184-Pin Registered Double Data Rate SDRAM Module 32M X 72 DDR DRAM MODULE, 0.5 ns, DMA184
|
Qimonda AG
http://
|
