| PART |
Description |
Maker |
| MMDF2N06VL_D ON2164 |
N-hannel Enhancement?ode Silicon Gate
From old datasheet system
|
ON Semi
|
| MMFT960T1 MMFT960T1_D ON2232 |
From old datasheet system
N-hannel Enhancement-ode Silicon Gate
MEDIUM POWER TMOS FET 300 mA 60 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MMG05N60D_D ON2233 MMG05N60D |
Insulated Gate Bipolar Transistor
From old datasheet system
N-hannel Enhancement-ode Silicon Gate
|
ONSEMI[ON Semiconductor]
|
| MGSF3455VT1 MGSF3455VT1_D ON1910 MGSF3455VT1-D ON1 |
From old datasheet system
P-CHANNEL ENHANCEMENT?ODE
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| NTMFS4H02N |
N??hannel Power MOSFET, 25 V
|
ON Semiconductor
|
| MPF4392 MPF4393 ON2307 |
(MPF4392) JFETs Switching
From old datasheet system
N-hannel Depletion
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| MRF6S23100H MRF6S23100HR306 MRF6S23100HR3 MRF6S231 |
RF Power Field Effect Transistors
2300??400 MHz, 20 W Avg., 28 V, 2 x W??DMA Lateral N??hannel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| MLP2N06CL ON2073 |
Internally Clamped, Current Limited N hannel Logic Level Power MOSFET
From old datasheet system
VOLTAGE CLAMPED CURRENT LIMITING MOSFET
|
Motorola, Inc.
ON Semi
|
| NTMFS4H01N NTMFS4H01NT3G |
N??hannel Power MOSFET, 25 V
Power MOSFET Single N?Channel
|
ON Semiconductor
|
| MC33102 MC33102D MC33102P MC33102_D ON0972 |
From old datasheet system
DUAL SLEEP-ODE OPERATIONAL AMPLIFIER
DUAL SLEEP-MODE OPERATIONAL AMPLIFIER
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
|
| BS250 70209 |
P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电45V，夹断电0.18A的P沟道增强型MOSFET晶体
From old datasheet system
P-Ch Enhancement-Mode MOSFET Transistors
|
Vishay Intertechnology,Inc.
|
