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LH28F128BF - Flash Memory

LH28F128BF_286815.PDF Datasheet


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AM29F080B-75SC Flash Memory IC; Memory Size:8Mbit; Memory Configuration:1M x 8; Package/Case:44-SOIC; Supply Voltage:5V; Access Time, Tacc:75ns; Mounting Type:Surface Mount 1M X 8 FLASH 5V PROM, 70 ns, PDSO44
Spansion, Inc.
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Winbond Electronics
WINBOND[Winbond]
AT49LV1614AT AT49BV1614AT-90TI AT49BV1614A-90TI AT AT49BV1604A(T)/AT49BV/LV1614A(T) [Updated 3/02. 26 Pages] 16M bit . 2.7-Volt(BV)/ 3.0 - Volt (LV). Sectored Flash. Dual Plane. Top or Bottom Boot
16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 16兆位100万x 16/2M × 8 3伏,只有闪存
Atmel Corp.
Atmel, Corp.
GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM(宽30
Intel, Corp.
Intel Corp.
MB84VA2005-10 MB84VA20 MB84VA2004 MB84VA2004-10 MB MCP (Multi-Chip Package) FLASH MEMORY & SRAM 8M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
HY29LV320BF-80 HY29LV320BF-80I HY29LV320BT-12I HY2 32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 80 ns, PDSO48
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ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
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Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
S71PL129JC0_06 S71PL129JA0 S71PL129JB0 S71PL129JC0 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory
SPANSION[SPANSION]
MB84VD21181-85-PBS MB84VD21181-85-PTS MB84VD21191- 16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM
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Fujitsu Microelectronics
CAT28F512P-12T CAT28F512N-15T CAT28F512NA-12T CAT2 64K X 8 FLASH 12V PROM, 90 ns, PDSO32
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64K X 8 FLASH 12V PROM, 120 ns, PDSO32
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CATALYST[Catalyst Semiconductor]
TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位)的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
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Toshiba, Corp.
Toshiba Corporation
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2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位256亩8位).0伏的CMOS只,引导扇区32引脚闪存
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
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Maxim Integrated Products, Inc.
Maixm
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
 
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