| PART |
Description |
Maker |
| THMY641661BEG-100 |
16M Word x 64 Bit Synchronous DRAM Module(16Mx 64位同步动态RAM模块)
16M Word x 64 Bit Synchronous DRAM Module(16M瀛?x 64浣??姝ュ???AM妯″?)
|
Toshiba Corporation
|
| HM5164405FTT-5 HM5165405FTT-5 HM5164405FTT-6 HM516 |
16M x 4-bit EDO DRAM, 50ns
16M x 4-bit EDO DRAM, 60ns
|
Hitachi Semiconductor
|
| MC-4516DA727PFA-A75 MC-4516DA727 MC-4516DA727EFA-A |
16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
|
NEC, Corp.
NEC Corp.
|
| MC-4516CD641XS-A10 MC-4516CD641XS-A80 |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144 SOCKET TYPE, SODIMM-144
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
|
Elpida Memory, Inc.
|
| KMM372C1600BK |
16M x 72 DRAM DIMM(16M x 72 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYI18T256160BF-25F HYI18T256160BC-25F HYB18T256160 |
16M X 16 DDR DRAM, 0.4 ns, PBGA84 GREEN, PLASTIC, TFBGA-84
16M X 16 DDR DRAM, 0.4 ns, PBGA84 PLASTIC, TFBGA-84
16M X 16 DDR DRAM, 0.45 ns, PBGA84
16M X 16 DDR DRAM, 0.5 ns, PBGA84
64M X 4 DDR DRAM, 0.45 ns, PBGA60
|
Qimonda AG
|
| HYB31645400ATL HYB3165400AJ-40 HYB3164400AJ-40 HYB |
16M x 4-Bit Dynamic RAM
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70
16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32
|
Siemens Semiconductor Group
SIEMENS AG
Infineon Technologies AG
|
| K4S56163LF K4S56163LF-F1H K4S56163LF-F1L K4S56163L |
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC 4米16 × 4银行4BOC移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| UPD4218160G5-60-7JF |
CMOS 16M-Bit DRAM
|
ETC
|
| UPD42S16165L |
3.3V Operation 16M-Bit DRAM
|
NEC Electronics
|
| UPD4516161 |
16M Bit Synchronous DRAM
|
NEC
|
