| PART |
Description |
Maker |
| HEF4505B HEF4505BF HEF4505BD HEF4505BN HEF4505BP H |
64-bit, 1-bit per word random access read/write memory
From old datasheet system
64-bit/ 1-bit per word random access read/write memory
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| HEF4720 HEF4720B HEF4720BD HEF4720BF HEF4720BN HEF |
256-bit/ 1-bit per word random access memories
256-bit, 1-bit per word random access memories
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| S34MS08G2 |
8 Gb, 4-Bit ECC, x8 I/O and 1.8 V VCC NAND Flash Memory for Embedded
|
Cypress Semiconductor
|
| LP61L1024S-12 LP61L1024X-12 LP61L1024V-12 LP61L102 |
128K X 8 BIT 3.3V HIGH SPEED LOW VCC CMOS SRAM 128K的8.3V的高速低虚拟通道连接CMOS SRAM
128K X 8 BIT 3.3V HIGH SPEED LOW VCC CMOS SRAM 128K的83.3V的高速低虚拟通道连接CMOS SRAM
|
AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| LP61L1024-15 |
128K X 8 BIT 3.3V HIGH SPEED LOW VCC CMOS SRAM
|
AMIC Technology
|
| S34MS01G1 S34MS02G1 S34MS04G1 |
1-bit ECC, x8 and x16 I/O, 1.8V VCC SLC NAND Flash for Embedded
|
Cypress Semiconductor
|
| MCM6147A MCM6147A-55 MCM6147A-70 MCM6147AP55 MCM61 |
4K BIT STATIC RANDOM ACCESS MEMORY
|
Motorola, Inc
|
| MB81464 MB81464-15 MB81464-12 |
MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY
MOS 262144 Bit DRAM
|
Fujitsu Microelectronics
Fujitsu Media Devices Limited
Fujitsu Component Limited.
|
| UT61L256JC-10 UT61L256JC-12 UT61L256JC-15 UT61L256 |
Access time: 10 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
Access time: 12 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
Access time: 15 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
Access time: 8 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
|
UTRON Technology
|
| 74F219PC 74F219SJ 74F219 74F219SC 74F219CW 74F219S |
64-Bit Random Access Memory with 3-STATE Outputs
|
FAIRCHILD[Fairchild Semiconductor]
|
| K1S3216B1C K1S3216B1C-I |
2Mx16 bit Uni-Transistor Random Access Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
