| PART |
Description |
Maker |
| MGTO1000 MGTO1200 |
GATE TURN OFF THYRISTORS
Gate turn-off thyristor / Repetitive peak off-state voltage 1000 V / 18 A RMS
|
MOTOROLA[Motorola, Inc]
|
| DG406BP2505 |
Gate Turn-off Thyristor
|
Dynex Semiconductor
|
| DG858DW45-15 |
Gate Turn-Off Thyristor
|
Dynex Semiconductor
|
| 5SGF30J4502 |
Gate turn-off Thyristor
|
The ABB Group
|
| DG858DW45 |
Gate Turn-Off Thyristor
|
DYNEX[Dynex Semiconductor]
|
| 5SGA25H2501 |
Gate turn-off Thyristor
|
ABB[The ABB Group]
|
| FGC4000BX-90DS FGR4000BX-90DS |
HIGH POWER INVERTER USE PRESS PACK TYPE 大功率逆变器使用的新闻包装
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
Gate communitated turn-off thyristor for high power inverter use press pack type
|
Powerex, Inc.
Mitsubishi Electric Corporation
|
| GDM20830 |
Gate Turn-off (GTO) Thyristor Module
|
Powerex Power Semiconductors
|
| GCU15CA-130 |
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| GCU08BA-130 |
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FG1000BV-90DA FD2000BV-90DA |
Gate turn-off thyristor for high power inverter use press pack type
MITSUBISHI GATE TURN-OFF THYRISTORS HIGH POWER INVERTER USE PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
