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MRF5S21100LSR3 - 2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET

MRF5S21100LSR3_282276.PDF Datasheet


 Full text search : 2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
 Product Description search : 2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET


 Related Part Number
PART Description Maker
MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L 2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
MRF5S21130HSR3 MRF5S21130HR3 2170 MHz, 28 W AVG., 28 V, 2 x W–CDMA, Lateral N–Channel RF Power MOSFET
To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
Freescale (Motorola)
Freescale Semiconductor, Inc
飞思卡尔半导体(中国)有限公司
PTF180101 PTF180101S LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
INFINEON[Infineon Technologies AG]
DS52-0002 DS52-0002-TR DS52-0002-RTR    Low Cost Two-Way SMT Power Divider 1920- 2170 MHz
Low Cost Two-Way SMT Power Divider 1920- 2170 MHz 低成本双向SMT功率分频920170年兆
1920-2170 MHz, Low cost two-way SMT power divider
Bel Fuse, Inc.
MACOM[Tyco Electronics]
MA-Com
PTF210301 PTF210301A PTF210301E LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 30 W 2110-2170 MHz
INFINEON[Infineon Technologies AG]
MHPA21010 MHPA21010 2110-2170 MHz, 10 W, 23.7 dB RF High Power LDMOS Amplifier
Motorola
PTAC210802FCV1R0 Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ?2170 MHz
Infineon Technologies A...
PTFA210301E Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz
Infineon Technologies AG
MRF6S21100NBR1 MRF6S21100N  Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz
Freescale Semiconductors
PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 鈥?2170 MHz
Infineon Technologies AG
 
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