PART |
Description |
Maker |
MP4210 |
POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
MP4211 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
PM50502C |
SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING
|
Hitachi Semiconductor
|
PM45502C |
Silicon N-Channel Power MOS FET Module 硅N沟道功率MOS场效应晶体管模块
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
M68732UL 68732UL |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 380-400MHz, 7W, FM PORTABLE RADIO From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M68739M 68739M |
From old datasheet system RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 155-168MHz, 7W, FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
M68701 68701 |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO From old datasheet system SILICON MOS FET POWER AMPLIFIER / 820-851MHz / 6W / FM PORTABLE RADIO
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M68745H 68745H |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3.8W, FM PORTABLE RADIO From old datasheet system SILICON MOS FET POWER AMPLIFIER 896-941MHz 3.8W FM PORTABLE RADIO SILICON MOS FET POWER AMPLIFIER / 896-941MHz / 3.8W / FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
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2SK1739A |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER
|
Toshiba Semiconductor Sanyo Semicon Device
|