| PART |
Description |
Maker |
| IDT71V256SA |
Lower Power 3.3V CMOS Fast SRAM
|
IDT
|
| AP2604GY-HF AP2604GY-HF-14 |
Fast Switching Characteristic, Lower Gate Charge
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| AP6677GH AP6677GH14 |
Lower On-resistance, Simple Drive Requirement, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
| AP99T06GP-HF AP99T06GP-HF-14 |
Simple Drive Requirement, Lower On-resistance, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| SGB04N60 SGB04N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW25N12009 SGW25N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| AP9561GM |
Simple Drive Requirement, Lower Gate Charge, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
| AP9998GI-HF |
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
| AP2310GK-HF AP2310GK-HF-14 |
Simple Drive Requirement, Lower Gate Charge, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| AP2311GK-HF AP2311GK-HF-14 |
Simple Drive Requirement, Lower Gate Charge, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| AP9561GH-HF AP9561GJ-HF AP9561GJ-HF-14 |
Simple Drive Requirement, Fast Switching Characteristic
Lower On-resistance, Simple Drive Requirement
45 A, 40 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
