| PART |
Description |
Maker |
| BAT62-02L BAT62-02W BAT62-08S BAT62-07W BAT62-03W |
Latest Silicon Discretes - Schottky Diode for power leveling
Schottky Diodes - Low barrier silicon RF Schottky diode for detectors
Schottky Diodes - Low barrier silicon RF Schottky diode array
|
Infineon
|
| NSR1020MW2T3G NSR1020MW2T1G |
Schottky Barrier Diode(肖特基势垒二极管) 1 A, 30 V, SILICON, SIGNAL DIODE
Schottky Barrier Diodes
|
ONSEMI[ON Semiconductor]
|
| HSB88WA |
Schottky Barrier Diodes for Detection and Mixer
SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
| NSR0530P2T5G |
Schottky Barrier Diode
30V 0.5A low VF SOD-923 Schottky Diode 0.5 A, 30 V, SILICON, SIGNAL DIODE
|
Rectron Semiconductor
|
| MADS-002502-1246HP MADS-002502-1246LP MADS-002502- |
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes
|
M/A-COM Technology Solutions, Inc.
|
| CD214A-B40 CD214A-B40L CD214A-B220 CD214A-B30 CD21 |
Schottky Barrier Diodes 2A, VR=60V 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AC
Schottky Barrier Rectifier Chip Diode
|
Bourns, Inc.
BOURNS[Bourns Electronic Solutions]
|
| BAS40DW-04 BAS40DW-05-TP BAS40DW-06-TP BAS40TW BAS |
200mW SCHOTTKY BARRIER Diode
DIODE SCHOTTKY 200MW 40V SOT363 0.2 A, 40 V, 4 ELEMENT, SILICON, SIGNAL DIODE
DIODE SCHOTTKY ARRAY 40V SOT-363 0.2 A, 40 V, 3 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
| BAT15-014 BAT15-044 BAT15-074 BAT15-104 BAT15-124 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) 硅肖特基二极管（低搅拌机应用障碍密封二极管频率高0 GHz的陶瓷封装）
RES, 18 OHM 1% 1/8W SILICON, LOW BARRIER SCHOTTKY, C BAND, MIXER DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BAT54SWT1G BAT54CWT1G |
Schottky Barrier diode
Schottky Diodes 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| BAS70DW-04 BAS70DW-06-TP BAS70TW BAS70DW-05 |
200mW SCHOTTKY BARRIER Diode
DIODE SCHOTTKY 200MW 70V SOT363 0.07 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
