| PART |
Description |
Maker |
| WF128K32N-120H1I5A WF128K32N-150H1I5 WF128K32N-50H |
120ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716
150ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716
60ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716
70ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716
90ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716
|
White Electronic Designs
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI |
70ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128K x 8 Ultra Low Power and Low VCC SRAM
From old datasheet system
55ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| GLT6200L16LI-70FG GLT6200L16LI-85TC GLT6200L16LI-5 |
70ns; Ultra low power 128K x 16 CMOS SRAM
85ns; Ultra low power 128K x 16 CMOS SRAM
55ns; Ultra low power 128K x 16 CMOS SRAM
|
G-LINK Technology
|
| EDI8L24128C12BC EDI8L24128C15BC |
12ns; 5V power supply; 128K x 24 asynchronous SRAM CMOS
15ns; 5V power supply; 128K x 24 asynchronous SRAM CMOS
|
White Electronic Designs
|
| AS7C33128FT32_36B AS7C33128FT36B-80TQIN AS7C33128F |
3.3V 128K x 32/36 Flow Through Synchronous SRAM 3.3 128K的x 32/36流通过同步SRAM
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 36 STANDARD SRAM, 8 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 6.5 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 36 STANDARD SRAM, 6.5 ns, PQFP100
128K X 32 STANDARD SRAM, 10 ns, PQFP100 14 X 20 MM, TQFP-100
LM3876 Overture™ Audio Power Amplifier Series High-Performance 56W Audio Power Amplifier w/Mute; Package: ISOLATED TO220; No of Pins: 11; Qty per Container: 20; Container: Rail
LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 3000; Container: Reel
LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 1000; Container: Reel
Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
Integrated Silicon Solution, Inc.
ALSC[Alliance Semiconductor Corporation]
|
| AM24S-3.3-13 AM48S-3.3-13 AM48S-2.5-10 AM48S-15-20 |
7ns, Low Power, Single Supply, Ground-Sensing Comparator; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
90NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM)
Analog IC
90NS, PLCC, IND TEMP(EEPROM)
70NS, PDIP, COM TEMP(EEPROM) 模拟IC
|
Glenair, Inc.
|
| IS61LF12832-8.5TQI IS61LF12832-7.5TQI IS61LF12832- |
128K x 32, 128K x 36 synchronous flow-through static RAM
128K X 32 CACHE SRAM, 8.5 ns, PQFP100
|
INTEGRATED SILICON SOLUTION INC
|
| EDI9F416128C-BN EDI9F416128C85BNC |
85ns; 5V power supply; 4 x 128K x 16 static RAM CMOS module
Differential Receiver/Equalizer; Temperature Range: -40°C to 85°C; Package: 16-QSOP T&R
|
White Electronic Designs
|
| IS61C1024 IS61C1024-12H IS61C1024-12HI IS61C1024-1 |
RES POWER .050 OHM 2W 1% SMT 128K X 8 STANDARD SRAM, 15 ns, PDSO32
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 20 ns, PDSO32
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 25 ns, PDSO32
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32
IC-1MB FAST SRAM 128K X 8 STANDARD SRAM, 15 ns, PDIP32
RES POWER .030 OHM 2W 5% SMT
RES POWER .020 OHM 2W 5% SMT
|
Integrated Silicon Solution, Inc.
ETC[ETC]
Integrated Silicon Solution Inc
|
| IDT71T024L200PZI IDT71T024 IDT71T024L150PZ IDT71T0 |
LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT) 128K X 8 STANDARD SRAM, 150 ns, PDSO32
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| AT28C010E-12FM/883 AT28C010E-12EC AT28C010-12EM AT |
120NS, 32FLTPCK, 883C; LEV B COMPLIANT(EEPROM) 128K X 8 EEPROM 5V, 120 ns, CDFP32
128K X 8 EEPROM 5V, 120 ns, CQCC32
120NS, 32 LCC, MIL TEMP(EEPROM)
128K X 8 EEPROM 5V, 150 ns, CDFP32
128K X 8 EEPROM 5V, 200 ns, CDIP32
128K X 8 EEPROM 5V, 250 ns, CDIP32
|
Atmel, Corp.
ATMEL CORP
|
