| PART |
Description |
Maker |
| 2SB922L 2SD1238L 2SD1238LR 2SB922LS |
Dual/Triple-Voltage µP Supervisory Circuits
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 12A I(C)
80V/12A Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| SI5482DU-T1-GE3 |
MOSFET N-CH 30V 12A PPAK CHIPFET
|
Vishay Siliconix
|
| RDS035 RDS035L03 |
Switching (30V, 3.5A)
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,3.5A I(D),SO
|
Rohm
|
| SBA120-18J |
180V/ 12A Rectifier
SWITCH PUSHBUTTON PANEL SEALED
180V 12A Rectifier
Schottky Barrier Diode (Twin Type Cathode Common) 180V, 12A Rectifier
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| NT7705 NT77A12DC9V NT77A5DC12V NT77A5DC18V NT77A5D |
Switching capacity up to 12A.
|
DB Lectro Inc
|
| IR3476MTR1PBF IR3476MTRPBF IR347613 2R5TPE330M9 C1 |
12A Highly Integrated SupIRBuck Continuous 12A Load Capability
Compensation Loop not Required
|
International Rectifier
|
| MG600Q1US41 E002366 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| RJK5012DPP-E0T2 RJK5012DPP-E0-15 |
500V - 12A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SC4423 |
NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator Applications
|
SANYO
|
