| PART |
Description |
Maker |
| MGF4910E |
(MGF4910E Series) Super Low Noise InGaAs HEMT
|
Mitsubishi Electric
|
| MGF4934AM07 MGF4934AM |
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
|
Mitsubishi Electric Semicon...
Mitsubishi Electric Semiconductor
|
| MGF4919E MGF4918E MGF4914E MGF4910E |
SUPER LOW MOISE InGaAs HEMT
|
Mitsubishi Electric Semiconductor
|
| LX5560L LX5560 |
InGaAs - E-Mode pHEMT Low Noise Amplifier
|
MICROSEMI[Microsemi Corporation]
|
| MGF4714CP 4714CP |
From old datasheet system
PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT 塑料模具包装低噪音铟镓砷迁移率晶体管
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Mitsubishi Electric, Corp.
|
| NE4210S01 NE4210S01-T1 NE4210S01-T1B |
SUPER LOW NOISE HJ FET
|
California Eastern Labs
|
| 2SC5606-A 2SC5606-T1-A 2SC56061 2SC5606 2SC5606-T1 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN
NPN SILICON RF TRANSISTOR FOR LOW NOISE ・ HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
NPN SILICON RF TRANSISTOR FOR LOW NOISE 路 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
NPN SILICON RF TRANSISTOR FOR LOW NOISE 隆陇 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
|
ST Microelectronics
NEC
|
| BCL016B |
SUPER LOW NOISE PHEMT CHIP
|
BeRex Corporation
|
| NE434S01_98 NE434S01 NE434S01-T1 NE434S01-T1B NE43 |
C BAND SUPER LOW NOISE HJ FET
|
NEC[NEC]
|
| TC1202 |
Super Low Noise GaAs FETs 超级低噪声砷化镓场效应管
|
Electronic Theatre Controls, Inc.
|
| NE32584 NE32584C NE32584C-S NE32584C-T NE32584C-SL |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC Corp.
NEC[NEC]
|
