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K4R881869 - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM

K4R881869_277479.PDF Datasheet


 Full text search : 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
 Product Description search : 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM


 Related Part Number
PART Description Maker
K4R881869 K4R881869M-NCK8 K4R881869M-NBCCG6 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
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HYB25M144180C HYB25R144180C HYB25M128160C 144-Mbit direct RDRAM(144 Mbit 直接 RDRAM)
144-MBit Direct RDRAM(144 M位直接RDRAM) 144兆位的直接的RDRAM144米位直接的RDRAM
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K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 (MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40
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