| PART |
Description |
Maker |
| KM416RD8ACD-RK70 KM416RD8ACD-RK80 KM418RD8ACD-RK70 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 128/144Mbit RDRAM56 × 16/18位2 * 16属银行直接RDRAMTM
24.9K 1% 1/4W -200 TO 500 PPM/C MF 128/144Mbit RDRAM56 × 16/18位2 * 16属银行直接RDRAMTM
BACKSHELL
CLAMP
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM418RD16AC KM418RD16AD KM418RD16C KM418RD16D |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
Samsung semiconductor
|
| AM42BDS6408G |
64 Mbit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst mode Flash Memory and 8 Mbi
From old datasheet system
|
AMD Inc
|
| IC42S81600-8TG IC42S81600L-8TG IC42S16800L-8TG IC4 |
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM 4M中的x 86）位× 4银行28 - Mbit的）同步动态RAM
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM 4）M中的x 86）位× 4银行128 - Mbit的）同步动态RAM
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM 4）M中的x 86）位× 4银行28 - Mbit的）同步动态RAM
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM 4M中的x 816）位× 4银行28 - Mbit的）同步动态RAM
IC DUAL SPDT ANALOG SW 16-SOIC
Single/Dual Supply, Quad SPDT Switch
Single/Dual Supply, Quad SPST Switch
ER 14C 14#16 SKT PLUG
RES 10K-OHM 5% 0.1W 200PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
RES 100K-OHM 5% 0.1W 200PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
RES 100K-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
|
Electronic Theatre Controls, Inc.
Toshiba, Corp.
Microchip Technology, Inc.
Integrated Circuit Solution Inc
Integrated Circuit Solu...
|
| KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 BANKS x 16 BIT SDRAM
DRAM - Datasheet Reference
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| HYB18T256400AF HYB18T256400AF-3 HYB18T256400AF-37 |
256 Mbi t DDR2 SDRAM
|
INFINEON[Infineon Technologies AG]
|
| S29PL129N70FFW002 S29PL127N65GFIW02 |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
|
SPANSION
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| HD14562B HD14562BP |
4000/14000/40000 SERIES, 128-BIT RIGHT SERIAL IN SERIAL OUT SHIFT REGISTER, TRUE OUTPUT, PDIP14
128-bit Static Shift Register
|
HITACHI[Hitachi Semiconductor]
|
| MT41J64M16JT MT41J128M8 MT41J256M4 MT41J64M16JT-12 |
DDR3 SDRAM MT41J256M4 ?32 Meg x 4 x 8 banks MT41J128M8 ?16 Meg x 8 x 8 banks MT41J64M16 ?8 Meg x 16 x 8 banks
|
Micron Technology
|
| SAF-XC164CS-16F20FAD SAF-XC164CS-16F40FAD SAF-XC16 |
16-Bit Microcontrollers - 128 K Flash, 6 K RAM, -40..85C, 20MHz
16-Bit Microcontrollers - 128 K Flash, 6 K RAM, -40..85C, 40MHz
16-Bit Microcontrollers - 128 K ROM, 6 K RAM, -40..85C
16-Bit Microcontrollers - 64 K Flash, 6 K RAM, -40..85C, 20MHz
16-Bit Microcontrollers - 64 K Flash, 6 K RAM, -40..85C, 40MHz
16-Bit Microcontrollers - 128 K Flash, 6 K RAM, -40..125C, 20MHz
16-Bit Microcontrollers - 128 K Flash, 6 K RAM, -40..125C, 40MHz
16-Bit Microcontrollers - 128 K ROM, 6 K RAM, -40..125C
16-Bit Microcontrollers - 64 K Flash, 6 K RAM, -40..125C, 20MHz
16-Bit Microcontrollers - 64 K Flash, 6 K RAM, -40..125C, 40MHz
New enhanced 16 Bit C166S V2 Architecture
|
Infineon
|
