PART |
Description |
Maker |
IS42S16160B IS42S83200B IS42S16160B-7BI IS42S16160 |
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Integrated Silicon Solution, Inc.
|
HYB39S128800FT-7 HYB39S128400FTL-7 HYB39S128400FT- |
128-MBit Synchronous DRAM 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 128-MBit Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Qimonda AG
|
HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
IS42S16100C1-6T IS42S16100C1-5T IS42S16100C1-5TL I |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
|
Integrated Silicon Solution, Inc. 天津新技术产业园区管理委员会
|
IS42S16100A1-10T |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
|
Integrated Silicon Solution, Inc.
|
HYB39S64400AT-8B HYB39S64160AT-8B HYB39S64800AT-8B |
64 MBit Synchronous DRAM
|
SIEMENS AG
|
HYB39S256160FE-6 HYB39S256160FE-7 HYB39S256407FE-7 |
256-MBit Synchronous DRAM
|
Qimonda AG
|
IS42S16160-7BL IS42S16160-6BLI |
256-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solu...
|
HYB39SC256 HYB39SC256800FF-7 |
256-MBit Synchronous DRAM
|
Qimonda AG
|
HYB39S16800BT-8 HB39S16B HYB39S16800BT-10 HYB39S16 |
From old datasheet system 16 MBit Synchronous DRAM
|
SIEMENS[Siemens Semiconductor Group]
|
IS42S32400D-6BLI IS42S32400D-6B-TR IS42S32400D-6TL |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc 天津新技术产业园区管理委员会
|
IS42S16800A1-7TL |
8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc.
|