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CXK77B1840AGB - 4Mb Late Write HSTL High Speed Synchronous SRAMs (128K x 36 or 256K x 18 Organization) From old datasheet system

CXK77B1840AGB_278976.PDF Datasheet


 Full text search : 4Mb Late Write HSTL High Speed Synchronous SRAMs (128K x 36 or 256K x 18 Organization) From old datasheet system
 Product Description search : 4Mb Late Write HSTL High Speed Synchronous SRAMs (128K x 36 or 256K x 18 Organization) From old datasheet system


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CXK77B1841AGB CXK77B3641AGB 4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit)(4分位,写延迟LVTTL高速同步静态随机存储器28K的36位)
4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发(HSTL)、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速(128K的x 36Bit)(4分位,写延迟,高速逻辑收发(HSTL),高速同步静态随机存储器28K的36位)同步静态存储器
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CXK77B1841GB 4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、写延迟LVTTL高速同步静态RAM (256K x 18) 4Mb的后写入LVTTL高速同步SRAM56 × 18位)分位,写延迟LVTTL高速同步静态随机存储器56 × 18位)
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Motorola
GS8170DW36C GS8170DW36C-200 GS8170DW36C-250 GS8170 18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM
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MCM63R918FC3.3R MCM63R918FC3.7R MCM63R836FC3.7R 512K X 18 LATE-WRITE SRAM, 1.65 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
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MOTOROLA INC
MCM69R738AZP7R MCM69R738AZP5 MCM69R738A MCM69R738A 4M Late Write 2.5 V I/O
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