| PART |
Description |
Maker |
| SGW20N60 Q67040-S4236 Q67041-A4712-A2 Q67041-A4712 |
Fast S-IGBT in NPT-technology
Fast S-IGBT in NPT-technology 快速的S -不扩散核武器条约IGBT的技
Fast S-IGBT in NPT-technology( NPT ???涓??蹇??S-IGBT)
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
SIEMENS A G
|
| SKW30N60 |
IGBTs & DuoPacks - 30A 600V TO247AC IGBT Diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
INFINEON[Infineon Technologies AG]
|
| SIGC12T60SNC |
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
|
Infineon Technologies AG
|
| K25N120 |
Fast IGBT in NPT-technology
|
Infineon Technologies
|
| SGP30N60 SGP30N6008 SGW30N60 |
Fast IGBT in NPT-technology
|
Infineon Technologies AG
Infineon Technologies A...
|
| SKW07N12008 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
|
| SKW25N12008 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
|
| SKB04N6007 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
|
| SGB30N6009 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB02N12007 SGB02N120 |
Fast IGBT in NPT-technology Lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB07N120 SGB07N12007 |
Fast IGBT in NPT-technology lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW15N120 SGP15N120 SGP15N12009 SGW15N120FKSA1 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
Infineon Technologies A...
|
