| PART |
Description |
Maker |
| RA07M1317M_06 RA07M1317M RA07M1317M-101 RA07M1317M |
RoHS Compliance , 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA08N1317M_06 RA08N1317M RA08N1317M-101 RA08N1317M |
RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA08H1317M_06 RA08H1317M RA08H1317M-101 RA08H1317M |
RoHS Compliance , 135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA30H1317M111 RA30H1317M1-201 |
RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA60H1317M RA60H1317M-101 RA60H1317M11 |
RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO
Broadband Frequency Range
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| M67781 M67781H |
135-160MHz / 12.5V / 40W / FM MOBILE RADIO
RF POWER MODULE 150-175MHz, 12.5V, 40W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
|
| LB135DS01 |
135.42MHz Low-Loss SAWF 8MHz Bandwidth 135.42MHz低损耗声表面波滤波器带宽MHz
|
SIPAT Co., Ltd.
SIPAT Co,Ltd
|
| D1210UK D1210 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-175MHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| M57732 57732 |
144-175 MHz, 12.5V, 7W, FM PORTABLE RADIO
144-175MHZ, 12.5V,7W, FM POPHTABLE RADIO
From old datasheet system
144-175MHz 12.5V /7W /FM PORTABLE RADIO
144-175MHz 12.5V,7W,FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
|
| D1003UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应60W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| RFP12N06RLE RFD12N06RLESM RFD12N06RLE FN2407 |
From old datasheet system
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs
12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N沟道,逻辑电平,功率MOS场效应管) 12 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
INTERSIL[Intersil Corporation]
Fairchild Semiconductor, Corp.
|
| NCP2809BDMR2G NCP2809A |
GT 19C 19#12 SKT RECP
NOCAP 135 mW Stereo Headphone Power Amplifier 0.131 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO10
NOCAP 135 mW Stereo Headphone Power Amplifier NOCAP 135毫瓦立体声耳机功率放大
|
ON Semiconductor
|
