| PART |
Description |
Maker |
| MNA-7 MNA-SERIES MNA-2 MNA-3 MNA-4 MNA-5 MNA-6 |
Monolithic Amplifiers High Directivity, 50? 0.5 to 5.9 GHz
Monolithic Amplifiers High Directivity 50 0.5 to 5.9 GHz
Monolithic Amplifiers High Directivity, 50з, 0.5 to 5.9 GHz
Monolithic Amplifiers High Directivity, 50, 0.5 to 5.9 GHz
|
MINI[Mini-Circuits]
|
| LEE-49 LEE-59 LEE-19 LEE-19_29_39_49_59 LEE-29 LEE |
Surface Mount Monolithic Amplifiers
Surface Mount Monolithic Amplifiers 0 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Surface Mount Monolithic Amplifiers 表面贴装单片放大
|
MINI[Mini-Circuits]
|
| M39832-B15WNE1T M39832-B15WNE6T M39832-B12WNE1T M3 |
TVS UNI-DIR 51V 600W DO-15
TVS UNI-DIR 30V 600W DO-15
RECTIFIER, BRIDGE, 600V, 6A, PB-6
TVS BI-DIR 30V 600W DO-15 单芯兆x812KB的x16闪存56千位并行EEPROM存储
|
意法半导
STMicroelectronics N.V.
|
| AK4110 AK4112A AK4112AVF AK4112 |
High Feature 96kHz 24bit DIR
|
AKM[Asahi Kasei Microsystems]
|
| LEE-39 DG03-170A LEE-29 LEE-19 |
MONOLITHIC AMPLIFIERS 整体式功
|
MINI[Mini-Circuits]
|
| 1N6275 1N6281 1N6274A 1N6292 1N6271A 1N6289 1N6269 |
Diode TVS Single Uni-Dir 12.1V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 21.8V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 11.1V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 60.7V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 8.55V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 45.4V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 8.1V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 6.63V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 97.2V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 89.2V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 7.37V 1.5KW 2-Pin Case 1
Diode TVS Single Bi-Dir 7.37V 1.5KW 2-Pin Case 1.5KE
|
New Jersey Semiconductor
|
| M38510-114A |
BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
|
ETC
|
| 30KP250 30KP320CA 30KP26A 30KP26C |
30KW TRANSIENT VOLTAGE SUPPRESSOR
Diode TVS Single Bi-Dir 320V 30KW 2-Pin Case D-6
Diode TVS Single Uni-Dir 26V 30KW 2-Pin Case D-6
Diode TVS Single Bi-Dir 26V 30KW 2-Pin Case D-6
|
New Jersey Semiconductor
|
| MC1558S MC1458S MC1458SD MC1458SG MC1458SP1 MC1558 |
DUAL OPERATIONAL AMPLIFIERS SILICON MONOLITHIC INTEGRATED CIRCUIT
|
MOTOROLA[Motorola, Inc]
|
| BFP193W |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| ACA2404 ACA2404S7P0 ACA2404S7P2 |
MIL-DTL-38999 JT06 SERIES CLASS RE STRAIGHT PLUGS, STRAIGHT BODY STYLE, CRIMP TERMINATION, 12 SHELL SIZE, 12-22 INSERT ARRANGEMENT, PLUG GENDER, 22
24V Line Amplifiers
High Output Power Doubler Line Amplifier
The ACA2404 is a highly linear, high output power, monolithic GaAs amplifier that has been developed to replace the standard CATV ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| BFR106 Q62702-F1219 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers For linear broadband amplifiers)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
