PART |
Description |
Maker |
K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90 2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125 Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
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K4S64163LH-RE K4S64163LH-RBE K4S64163LH-N K4S64163 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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K4S641632D K4S641632D-TC_L1H K4S641632D-TC_L1L K4S |
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC
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Samsung Electronic SAMSUNG SEMICONDUCTOR CO. LTD.
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CFY25-20 CFY25-17 CFY25-23 Q62703-F107 Q62703-F106 |
Advanced PFC/PWM Combination Controllers 20-SOIC -40 to 105 Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) 砷化镓场效应管(低噪声高增益对于前端放大器离子注入平面结构全部镀金) GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
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SIEMENS AG
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CFY30 Q62703-F97 |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105 GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) From old datasheet system
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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K4S640832 K4S640832F K4S640832F-TL75 K4S640832F-TC |
Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronics Inc
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CFY77 CFY77-08 CFY77-10 Q62702-F1559 Q62702-F1549 |
From old datasheet system AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
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Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
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ISL210070712 ISL21007 ISL21007BFB812Z ISL21007BFB8 |
Precision, Low Noise FGA?Voltage References Precision, Low Noise FGA?⒅oltage References Precision, Low Noise FGA⑩Voltage References Precision, Low Noise FGA™ Voltage References; Temperature Range: Full-Range Ind; Package: 8-SOIC T&R 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 1.25 V, PDSO8
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Intersil Corporation Intersil, Corp.
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NCP2860 NCP2860DM277R2 |
300 mA Very Low Noise LDO 300 mA Very Low Noise, Low Dropout Linear Regulator From old datasheet system
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ONSEMI[ON Semiconductor]
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K4S641632F-TL55 K4S641632F-TL70 K4S641632F-TC70 K4 |
RF CONNECTOR; FME PLUG, CRIMP ATTACHMENT FOR RG58 RF CONNECTOR; 75 OHM MCX JACK, SURFACE MOUNT Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
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SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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HZ4BLL HZ2BLL HZ4CLL HZ4ALL HZ5BLL HZ3ALL HZ2CLL H |
Diodes>Zener Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise TRANSFRMR 7V 3.570A WITH WIRES Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算,低反向泄露,低噪声稳压二极
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RENESAS[Renesas Electronics Corporation] Renesas Electronics Corporation. Renesas Electronics, Corp.
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