| PART |
Description |
Maker |
| RF1S640SM IRF640 RF1S640 |
N-Channel Power MOSFETs/ 18A/ 150-200V
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| HY18N20D |
200V / 18A N-Channel Enhancement Mode MOSFET
|
HY ELECTRONIC CORP.
|
| FDS8672S FAIRCHILDSEMICONDUCTORCORP-FDS8672S |
N-Channel PowerTrench㈢ SyncFET⑩ 30V, 18A, 4.8mヘ
N-Channel PowerTrench? SyncFET?/a> 30V, 18A, 4.8mΩ
|
Fairchild Semiconductor
|
| FDMC8678S |
N-Channel Power Trench? SyncFET TM 30V, 18A, 5.2mΩ
N-Channel Power Trench㈢ SyncFET TM 30V, 18A, 5.2mヘ
|
Fairchild Semiconductor
|
| STSJ80N4LLF3 |
N-channel 40V - 0.0042Ω - 18A - PowerSO-8 STripFET?III Power MOSFET for DC-DC conversion
N-channel 40V - 0.0042ヘ - 18A - PowerSO-8⑩ STripFET⑩III Power MOSFET for DC-DC conversion
|
STMicroelectronics
|
| IRF240 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
HEXFET?TRANSISTORS 200V, N-CHANNEL
REPETITIVE AVALANCHE AND dv/dt RATED
|
IRF[International Rectifier]
|
| IRF5Y5305CM |
POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.065ohm/ Id=-18A*)
POWER MOSFET P-CHANNEL(Vdss=-55V Rds(on)=0.065ohm Id=-18A*)
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-18A*)
-55V Single P-Channel Hi-Rel MOSFET in a TO-257AA package
|
IRF[International Rectifier]
|
| FQPF32N20C FQP32N20C |
200V N-Channel Advance Q-FET C-Series
From old datasheet system
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| FQPF10N20C FQPF10N20CNL |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET 9.5 A, 200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQI32N20C FQB32N20C FQB32N20CTM |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET 28 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
