| PART |
Description |
Maker |
| MMBF170LT1-D |
Power MOSFET 500 mAmps, 60 Volts N-Channel SOT-23
|
ON Semiconductor
|
| BSS123LT1D BSS123LT3 BSS123LT1-D BSS123LT1/D BSS12 |
Power MOSFET 170 mAmps/ 100 Volts
Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23
Transient Voltage Suppressor Diodes
|
ON Semiconductor
|
| BS170 |
Small Signal MOSFET 500 mAmps, 60 Volts N-Channel TO-92(500mA,60V,小信号，N-沟道增强型MOS场效应管（TO-92封装
|
ON Semiconductor
|
| APT50M75LLL APT50M75B2LL APT50M75B2LL_04 APT50M75B |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.075; BVDSS (V): 500; 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS 7 R MOSFET
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| LBSS139DW1T1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| LBSS139WT1G LBSS139WT3G |
Power MOSFET 200 mAmps, 50 Volts N?Channel SC?0
|
Leshan Radio Company
|
| 2N7002LT1-D 2N7002LT1/D |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
Small Signal MOSFET 115 mAmps, 60 Volts N-Channel SOT3
Small Signal MOSFET 115 mAmps, 60 Volts N-Channel SOT?3
|
ON Semiconductor
|
| LBSS138LT1 LBSS138LT1G |
Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3
|
乐山无线电股份有限公
|
| MMBF2202PT1G MMBF2202PT106 MMBF2202PT1 |
Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323
|
ONSEMI[ON Semiconductor]
|
| MMBF0201NLT106 MMBF0201NLT1G MMBF0201NLT1 |
Power MOSFET 300 mAmps, 20 Volts N−Channel SOT−23
|
ONSEMI[ON Semiconductor]
|
